Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Features• 1.5A, 250V, rDS(ON) = 2.30Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2

Manufacturer	Fairchild Semiconductor
Product Category	AC DC Converters, Offline Switchers
Series	FPS™
Packaging	Tube
Unit-Weight	0.025045 oz
Mounting-Style	SMD/SMT
Package-Case	8-SMD, Gull Wing
Operating-Temperature	-40°C ~ 150°C (TJ)
Mounting-Type	Surface Mount
Supplier-Device-Package	8-LSOP
Watt	12W
Output-Isolation	Isolated
Internal-Switch-s	Yes
Voltage-Breakdown	650V
Topology	Flyback
Voltage-Start-Up	8V
Voltage-Supply-Vcc-Vdd	7 V ~ 26 V
Duty-Cycle	72%
Frequency-Switching	67kHz
Fault-Protection	Current Limiting, Over Load, Over Temperature, Over Voltage
Control-Features	-
Maximum Operating Temperature	+ 115 C
Package-Case	SOP-8